18432084. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shinya Umeki of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432084 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor layer with active regions, IGBT regions, and diode regions. The dispersion degree of the diode regions with respect to the active region must fall within a specific range.
- The semiconductor device has a semiconductor layer with active, IGBT, and diode regions.
- The dispersion degree of the diode regions must be between 2 and 15, based on the formula Log(L/SD).
Potential Applications
This technology could be applied in:
- Power electronics
- Renewable energy systems
- Electric vehicles
Problems Solved
This technology helps in:
- Improving efficiency in power conversion
- Enhancing the performance of electronic devices
- Reducing energy losses in semiconductor devices
Benefits
The benefits of this technology include:
- Higher efficiency in power conversion
- Improved reliability of electronic devices
- Reduced energy consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Power electronics industry
- Electric vehicle manufacturing
- Renewable energy sector
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to semiconductor devices with optimized dispersion of diode regions.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This question can be answered through comparative studies and performance testing of the new semiconductor device against existing technologies.
What are the potential challenges in implementing this technology on a large scale in industrial applications?
This question can be addressed by conducting feasibility studies and analyzing the scalability of the technology for mass production and commercialization.
Original Abstract Submitted
A semiconductor device includes a semiconductor layer that has a first main surface at one side and a second main surface at another side and includes an active region, a plurality of IGBT regions that are formed in the active region, and a plurality of diode regions that are formed in the active region such as to be adjacent to the plurality of IGBT regions, and where when a total extension of boundary lines between the plurality of IGBT regions and the plurality of diode regions is represented by L, a total area of the plurality of diode regions is represented by SD, and a dispersion degree of the plurality of diode regions with respect to the active region is defined by a formula Log(L/SD), the dispersion degree is not less than 2 and not more than 15.