Category:Keumseok Park of Slingerlands NY (US)
Keumseok Park
Keumseok Park from Slingerlands NY (US) has applied for patents in technology areas such as H01L29/10, H01L21/74, H01L21/822 with samsung electronics co., ltd..
Patents
Pages in category "Keumseok Park of Slingerlands NY (US)"
The following 7 pages are in this category, out of 7 total.
1
- 18184901. INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18233693. 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract (Samsung Electronics Co., Ltd.)
S
- Samsung electronics co., ltd. (20240290689). SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20240304669). 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract
- Samsung electronics co., ltd. (20240332131). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240379780). 3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERTICALLY ISOLATED FROM EACH OTHER BY STRENGTHENED ISOLATION STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20250081562). SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGION WITH UNDERBLOCKING LAYER THEREON