Jump to content

Category:Uppili S. Raghunathan of Essex Junction VT US

From WikiPatents

Uppili S. Raghunathan

Uppili S. Raghunathan from Essex Junction VT US has applied for patents in technology areas such as H01L29/10, H01L29/08, H01L29/66 with GlobalFoundries U.S. Inc..

Patents

BIPOLAR TRANSISTOR STRUCTURES WITH CAVITY BELOW EXTRINSIC BASE AND METHODS TO FORM SAME (18481632)

Pages in category "Uppili S. Raghunathan of Essex Junction VT US"

The following 2 pages are in this category, out of 2 total.

1

18481632. BIPOLAR TRANSISTOR STRUCTURES WITH CAVITY BELOW EXTRINSIC BASE AND METHODS TO FORM SAME (GlobalFoundries U.S. Inc.)

2

20250185265. Silicon Controlled R (GlobalFoundries U.S. .)

Retrieved from "https://wikipatents.org/index.php?title=Category:Uppili_S._Raghunathan_of_Essex_Junction_VT_US&oldid=483853"

Cookies help us deliver our services. By using our services, you agree to our use of cookies.