SEMICONDUCTOR DEVICE INCLUDING A VERTICAL CHANNEL TRANSISTOR

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SEMICONDUCTOR DEVICE INCLUDING A VERTICAL CHANNEL TRANSISTOR

This abstract first appeared for US patent application 18738107 titled 'SEMICONDUCTOR DEVICE INCLUDING A VERTICAL CHANNEL TRANSISTOR

Original Abstract Submitted

A semiconductor device includes: a mold insulating pattern positioned on a substrate; an upper conductive line extending in a first horizontal direction on the substrate; a channel structure including a vertical channel portion that faces a side surface of the upper conductive line, and is in contact with a first side wall of the mold insulating pattern, wherein the vertical channel portion extends in a vertical direction; a first gate dielectric layer at least partially surround a surface of the channel structure; and a second gate dielectric layer positioned between the upper conductive line and the first gate dielectric layer on the channel structure, wherein the mold insulating pattern includes a body and protrusion, wherein the body extends in the first horizontal direction, and the protrusion protrude in a second horizontal direction that intersects with the first horizontal direction.