FIELD-EFFECT TRANSISTORS WITH INTERLEAVED FINGER CONFIGURATION

Organization Name

SKYWORKS SOLUTIONS, INC.

Inventor(s)

Hailing Wang of Acton MA (US)

Dylan Charles Bartle of Arlington MA (US)

Hanching Fuh of Allston MA (US)

David Scott Whitefield of Andover MA (US)

Paul T. Dicarlo of Marlborough MA (US)

FIELD-EFFECT TRANSISTORS WITH INTERLEAVED FINGER CONFIGURATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18537651 titled 'FIELD-EFFECT TRANSISTORS WITH INTERLEAVED FINGER CONFIGURATION

The fabrication of field-effect transistor (FET) devices is described in this patent application. The FET devices include body contacts between source, gate, and drain assemblies to enhance the impact of a voltage applied at the body contact on the S/G/D assemblies. The FET devices may have source fingers and drain fingers interleaved with gate fingers, with the source and drain fingers of one assembly connected to those of another assembly, and arranged in alternating rows.

Body contacts implemented between source, gate, and drain assemblies
Source fingers and drain fingers interleaved with gate fingers
Electrical connection between source and drain fingers of different assemblies
Arrangement of source and drain fingers in alternating rows
Enhancement of voltage impact on S/G/D assemblies

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced electronic devices, such as high-performance transistors used in integrated circuits, sensors, and other electronic systems.

Problems Solved

This innovation addresses the challenge of improving the influence of a voltage applied at the body contact on the source, gate, and drain assemblies in FET devices. By implementing body contacts and connecting source and drain fingers of different assemblies, the technology enhances the overall performance and efficiency of these devices.

Benefits

The benefits of this technology include increased control over the behavior of FET devices, improved reliability, and enhanced functionality in various electronic applications. By optimizing the voltage impact on the S/G/D assemblies, the technology contributes to the development of more efficient and reliable electronic systems.

Commercial Applications

The technology described in this patent application has significant commercial potential in the semiconductor industry, particularly in the production of advanced electronic components for consumer electronics, telecommunications, and computing devices. Manufacturers and developers in these sectors could leverage this innovation to enhance the performance and capabilities of their products.

Questions about Field-Effect Transistor Devices

What are the key features of FET devices described in the patent application?

The key features of the FET devices include body contacts between source, gate, and drain assemblies, interleaved source and drain fingers with gate fingers, and the arrangement of source and drain fingers in alternating rows.

How does the technology improve the influence of a voltage applied at the body contact on the S/G/D assemblies?

The technology enhances the impact of the voltage by implementing body contacts and connecting source and drain fingers of different assemblies, thereby optimizing the performance and efficiency of the FET devices.

Original Abstract Submitted

The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. The FET devices can include source fingers and drain fingers interleaved with gate fingers. The source and drain fingers of a first S/G/D assembly can be electrically connected to the source and drain fingers of a second S/G/D assembly. The source fingers and the drain fingers can be arranged in alternating rows.