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Category:H10N50/80
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Pages in category "H10N50/80"
The following 44 pages are in this category, out of 44 total.
1
- 18152171. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18158086. Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18165447. MAGNETIC PROPERTY MEASURING SYSTEM, A METHOD FOR MEASURING MAGNETIC PROPERTIES, AND A METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18337576. MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18447856. Memory Device With Source Lines in Parallel simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18455815. SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18464350. MAGNETIC MEMORY simplified abstract (Kioxia Corporation)
- 18466868. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18484466. MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18507152. SPACER SCHEME AND METHOD FOR MRAM simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511133. MEMORY CELL WITH TOP ELECTRODE VIA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18512515. METHOD OF FABRICATING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516751. MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519085. MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18520427. MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521399. GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521560. SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
B
K
- Kioxia corporation (20240099019). MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE simplified abstract
- Kioxia corporation (20240099155). MAGNETIC MEMORY simplified abstract
- Kioxia corporation (20240099156). MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240099149). MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240099150). GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240099151). SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240114702). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240122077). SPACER SCHEME AND METHOD FOR MRAM simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
U
- US Patent Application 18232027. SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-ETCHED MTJ CELLS TO REDUCE CONDUCTIVE RE-DEPOSITION simplified abstract
- US Patent Application 18232941. MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
- US Patent Application 18361832. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18364697. SIDEWALL SPACER STRUCTURE FOR MEMORY CELL simplified abstract
- US Patent Application 18446398. MAGNETIC TUNNEL JUNCTION STRUCTURES WITH PROTECTION OUTER LAYERS simplified abstract
- US Patent Application 18446563. STRUCTURE AND METHOD FOR MRAM DEVICES simplified abstract
- US Patent Application 18446703. MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract
- US Patent Application 18447383. MRAM Fabrication and Device simplified abstract
- US Patent Application 18447912. MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM simplified abstract