18516751. MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Heng Liao of Hsinchu (TW)
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516751 titled 'MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
Simplified Explanation
The present disclosure describes a MRAM cell with an extended upper electrode and a method of formation. The cell includes a magnetic tunnel junction over a lower electrode, with an upper electrode on top. There are conductive via and jumper structures in different dielectric layers, with a dielectric body extending between them.
- MRAM cell with extended upper electrode
- Magnetic tunnel junction over lower electrode
- Conductive via and jumper structures in different dielectric layers
- Dielectric body extending between dielectric layers
Potential Applications
- Data storage devices
- Computer memory modules
- Embedded systems
Problems Solved
- Enhanced data storage capacity
- Improved memory retention
- Increased data transfer speeds
Benefits
- Higher performance
- Increased reliability
- Energy efficiency improvements
Original Abstract Submitted
The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.
