18337576. MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE
Organization Name
Inventor(s)
Hyung-woo Ahn of Seongnam-si (KR)
Young Min Eeh of Yokohama Kanagawa (JP)
MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18337576 titled 'MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE
Simplified Explanation
The magnetoresistance memory device described in the patent application consists of a lower electrode, a barrier layer, a variable resistance layer, an upper electrode, and a first layer stack. The lower electrode is made of either amorphous carbon or amorphous carbon nitride. The barrier layer, which is placed on the lower electrode, is composed of tungsten nitride (WN) or silicon tungsten nitride (WSiN). The variable resistance layer, situated on the barrier layer, contains a material with variable resistance. The upper electrode, placed on the variable resistance layer, is made of either amorphous carbon or amorphous carbon nitride. The first layer stack, located on the upper electrode, includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the two ferromagnetic layers.
- Lower electrode made of amorphous carbon or amorphous carbon nitride
- Barrier layer composed of tungsten nitride (WN) or silicon tungsten nitride (WSiN)
- Variable resistance layer containing a material with variable resistance
- Upper electrode made of amorphous carbon or amorphous carbon nitride
- First layer stack including a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer
Potential Applications
The technology described in this patent application could be applied in:
- Non-volatile memory devices
- Magnetic sensors
- Spintronic devices
Problems Solved
This technology addresses the following issues:
- Enhancing memory storage capacity
- Improving data retention in memory devices
- Increasing data transfer speeds
Benefits
The benefits of this technology include:
- Higher performance and efficiency in memory devices
- Enhanced reliability and durability
- Reduced power consumption
Potential Commercial Applications
"Advanced Magnetoresistance Memory Device Technology for Next-Generation Electronics"
Possible Prior Art
One example of prior art in this field is the development of magnetoresistive random-access memory (MRAM) technology, which utilizes magnetic tunnel junctions to store data.
Unanswered Questions
How does the magnetoresistance memory device compare to existing memory technologies in terms of speed and capacity?
The article does not provide a direct comparison between the magnetoresistance memory device and other memory technologies.
What are the potential challenges in scaling up the production of this technology for commercial use?
The article does not address the scalability and production challenges that may arise when implementing this technology on a larger scale.
Original Abstract Submitted
A magnetoresistance memory device includes a lower electrode, a barrier layer, a variable resistance layer, an upper electrode, and a first layer stack. The lower electrode contains one of amorphous carbon and amorphous carbon nitride. The barrier layer is provided on the lower electrode and contains one of tungsten nitride (WN) and silicon tungsten nitride (WSiN). The variable resistance layer is provided on the barrier layer and contains a variable resistance material. The upper electrode is provided on the variable resistance layer and contains one of amorphous carbon and amorphous carbon nitride. The first layer stack is provided on the upper electrode and includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer.
