18507152. SPACER SCHEME AND METHOD FOR MRAM simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SPACER SCHEME AND METHOD FOR MRAM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SPACER SCHEME AND METHOD FOR MRAM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the thin layer impact the overall conductivity of the MRAM cell?
- 1.11 What are the potential challenges in implementing this technology on a large scale?
- 1.12 Original Abstract Submitted
SPACER SCHEME AND METHOD FOR MRAM
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Joung-Wei Liou of Zhudong Township (TW)
Chin Kun Lan of Hsinchu City (TW)
SPACER SCHEME AND METHOD FOR MRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18507152 titled 'SPACER SCHEME AND METHOD FOR MRAM
Simplified Explanation
An MRAM cell includes a metal tunneling junction with a thin layer on the side surface containing compounds of a metal found in one of the electrodes. The thin layer has lower conductance than the MTJ and may include an oxide or compound of the electrode metal. A silicon nitride spacer can be formed over the thin layer without forming nitrides of the electrode metal.
- Metal tunneling junction with a thin layer on the side surface
- Thin layer contains compounds of electrode metal
- Thin layer has lower conductance than MTJ
- Silicon nitride spacer formed over thin layer
Potential Applications
The technology described in the patent application could be applied in the development of more efficient and reliable MRAM cells for use in various electronic devices such as computers, smartphones, and other digital systems.
Problems Solved
This technology addresses the issue of improving the performance and stability of MRAM cells by optimizing the metal tunneling junction structure and enhancing the conductivity of the electrodes.
Benefits
The benefits of this technology include increased data storage capacity, faster data access speeds, lower power consumption, and improved overall performance of MRAM cells in electronic devices.
Potential Commercial Applications
The optimized MRAM cells could find commercial applications in the semiconductor industry for manufacturing advanced memory devices with higher storage capacities and improved efficiency.
Possible Prior Art
One possible prior art in this field could be the development of MRAM cells with different electrode materials and structures to enhance their performance and reliability.
Unanswered Questions
How does the thin layer impact the overall conductivity of the MRAM cell?
The thin layer containing compounds of the electrode metal may affect the conductivity of the MRAM cell, but the specific mechanisms and interactions involved are not detailed in the abstract.
What are the potential challenges in implementing this technology on a large scale?
While the technology shows promise for improving MRAM cell performance, there may be challenges in scaling up production and ensuring consistent quality control in manufacturing processes.
Original Abstract Submitted
An MRAM cell has a bottom electrode, a metal tunneling junction, and a top electrode. The metal tunneling junction has a side surface between the bottom electrode and the top electrode. A thin layer on the side surface includes one or more compounds of a metal found in one of the electrodes. The thin layer has a lower conductance than the MTJ. The electrode metal may have been deposited on the side during MTJ patterning and subsequently been reacted to form a compound having a lower conductance than a nitride of the electrode metal. The thin layer may include an oxide deposited over the redeposited electrode metal. The thin layer may include a compound of the electrode metal deposited over the redeposited electrode metal. A silicon nitride spacer may be formed over the thin layer without forming nitrides of the electrode metal.
