US Patent Application 18446398. MAGNETIC TUNNEL JUNCTION STRUCTURES WITH PROTECTION OUTER LAYERS simplified abstract

MAGNETIC TUNNEL JUNCTION STRUCTURES WITH PROTECTION OUTER LAYERS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Sheng-Chang Chen of Hsinchu (TW)

Harry-Hak-Lay Chuang of Hsinchu (TW)

Hung Cho Wang of Hsinchu (TW)

Sheng-Huang Huang of Hsinchu (TW)

MAGNETIC TUNNEL JUNCTION STRUCTURES WITH PROTECTION OUTER LAYERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446398 titled 'MAGNETIC TUNNEL JUNCTION STRUCTURES WITH PROTECTION OUTER LAYERS

Simplified Explanation

The patent application is about a type of memory cell called magneto-resistive random access memory (MRAM) cell.

• The MRAM cell has an extended upper electrode.
• The patent application also describes a method of forming the MRAM cell.
• The MRAM cell includes a magnetic tunnel junction (MTJ) placed over a conductive lower electrode.
• Two protection layers are used to surround the sidewall of the MTJ.
• The two protection layers have different etch selectivity, meaning they can be selectively removed without affecting each other.

Original Abstract Submitted

The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation the same. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. Two protection layers sequentially surround a sidewall of the MTJ. The two protection layers have etch selectivity over one another.