Kioxia corporation (20240099019). MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE simplified abstract
Contents
- 1 MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE
Organization Name
Inventor(s)
Hyung-woo Ahn of Seongnam-si (KR)
Young Min Eeh of Yokohama Kanagawa (JP)
MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099019 titled 'MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE
Simplified Explanation
The patent application describes a magnetoresistance memory device with specific layers and materials to improve its performance and reliability.
- Lower electrode made of amorphous carbon or amorphous carbon nitride
- Barrier layer made of tungsten nitride (WN) or silicon tungsten nitride (WSiN)
- Variable resistance layer with a variable resistance material
- Upper electrode made of amorphous carbon or amorphous carbon nitride
- First layer stack with a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between them
Potential Applications
This technology can be applied in:
- Non-volatile memory devices
- Magnetic sensors
- Spintronic devices
Problems Solved
This technology addresses issues such as:
- Improving memory device performance
- Enhancing data retention
- Increasing device reliability
Benefits
The benefits of this technology include:
- Higher data storage capacity
- Faster data access speeds
- Lower power consumption
Potential Commercial Applications
The potential commercial applications of this technology include:
- Memory storage devices for consumer electronics
- Data storage solutions for cloud computing
- Magnetic sensors for industrial applications
Possible Prior Art
One possible prior art for this technology could be the use of similar materials and layer structures in magnetoresistance memory devices developed by other research groups or companies.
Unanswered Questions
How does this technology compare to existing magnetoresistance memory devices in terms of performance and reliability?
This article does not provide a direct comparison with existing technologies in the field.
What are the potential challenges in scaling up the production of this magnetoresistance memory device for mass manufacturing?
The article does not address the scalability and mass production challenges of this technology.
Original Abstract Submitted
a magnetoresistance memory device includes a lower electrode, a barrier layer, a variable resistance layer, an upper electrode, and a first layer stack. the lower electrode contains one of amorphous carbon and amorphous carbon nitride. the barrier layer is provided on the lower electrode and contains one of tungsten nitride (wn) and silicon tungsten nitride (wsin). the variable resistance layer is provided on the barrier layer and contains a variable resistance material. the upper electrode is provided on the variable resistance layer and contains one of amorphous carbon and amorphous carbon nitride. the first layer stack is provided on the upper electrode and includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer.
