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Category:H01L27/11
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Pages in category "H01L27/11"
The following 32 pages are in this category, out of 32 total.
1
- 17644076. METAL GATE PATTERNING FOR LOGIC AND SRAM IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17730962. STATIC RANDOM-ACCESS MEMORY (SRAM) DEVICE INCLUDING THREE-DIMENSIONAL STACKED (3DS) FIELD-EFFECT TRANSISTOR (FET) AND LAYOUT THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 17743233. MEMORY DEVICES INCLUDING TRANSISTORS ON MULTIPLE LAYERS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17808178. DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809076. STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17815285. MEMORY STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17822454. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851979. INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES simplified abstract (Intel Corporation)
- 17876044. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17887533. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17898060. COMPACT MICROELECTRONIC 6T SRAM MEMORY DEVICES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17898816. STORAGE DEVICE, STORAGE SYSTEM, AND OPERATION METHOD OF STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17900639. Performance Optimization By Sizing Gates And Source/Drain Contacts Differently For Different Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17940944. FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS simplified abstract (Intel Corporation)
- 17949579. SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (International Business Machines Corporation)
- 17960222. STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract (International Business Machines Corporation)
I
- Intel Corporation patent applications on March 14th, 2024
- International business machines corporation (20240098961). SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract
- International business machines corporation (20240121933). STACKED-FET SRAM CELL WITH BOTTOM pFET simplified abstract
- International Business Machines Corporation patent applications on April 11th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
T
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
U
- US Patent Application 17731781. Shared Pick-Up Regions for Memory Devices simplified abstract
- US Patent Application 17826225. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 17828123. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18076963. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract