US Patent Application 17826225. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chun-Hung Chen of Hsinchu (TW)]]

[[Category:Jhon-Jhy Liaw of Zhudong Township (TW)]]

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17826225 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a method for forming a semiconductor structure.

  • The method involves creating two trenches in a first semiconductor material, with one trench being deeper than the other.
  • A second semiconductor material is then formed in both trenches.
  • The first portion of the second semiconductor material in the deeper trench and the first portion of the first semiconductor material below it are patterned into a first fin structure.
  • Similarly, the second portion of the second semiconductor material in the shallower trench and the second portion of the first semiconductor material below it are patterned into a second fin structure.
  • An isolation structure is then formed around both fin structures.


Original Abstract Submitted

A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a first trench and a second trench in a first semiconductor material. The first trench is deeper than the second trench. The method also includes forming a second semiconductor material in the first trench and the second trench, patterning a first portion of the second semiconductor material in the first trench and a first portion of the first semiconductor material below the first portion of the second semiconductor material into a first fin structure, and patterning a second portion of the second semiconductor material in the second trench and a second portion of the first semiconductor material below the second portion of the second semiconductor material into a second fin structure, and forming an isolation structure surrounding the first fin structure and the second fin structure.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_17826225._SEMICONDUCTOR_STRUCTURE_AND_METHOD_FOR_FORMING_THE_SAME_simplified_abstract&oldid=9045"