17808178. DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
REINALDO Vega of Mahopac NY (US)
Takashi Ando of Eastchester NY (US)
Praneet Adusumilli of Somerset NJ (US)
David Wolpert of Poughkeepsie NY (US)
Cheng Chi of Jersey City NJ (US)
DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH - A simplified explanation of the abstract
This abstract first appeared for US patent application 17808178 titled 'DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH
Simplified Explanation
The abstract describes an approach to creating a semiconductor device that includes a decoupling capacitor to separate two gates. The decoupling capacitor consists of a dielectric liner and a ferroelectric material. The device also includes two power rails connected to the decoupling capacitor through the two gates.
- The semiconductor device includes a decoupling capacitor that separates two gates.
- The decoupling capacitor consists of a dielectric liner and a ferroelectric material.
- The device has two power rails connected to the decoupling capacitor through the two gates.
Potential Applications
- This technology can be used in various semiconductor devices such as integrated circuits and transistors.
- It can improve the performance and reliability of these devices by reducing noise and improving power distribution.
Problems Solved
- The decoupling capacitor helps to separate the two gates, reducing interference and improving the overall performance of the semiconductor device.
- By providing a separate power rail through the decoupling capacitor, power distribution can be more efficient and stable.
Benefits
- Improved performance and reliability of semiconductor devices.
- Reduced noise and interference.
- More efficient and stable power distribution.
References
[Link to the patent application]
Original Abstract Submitted
An approach to forming a semiconductor device where the semiconductor device includes a first power rail that is connected to a decoupling capacitor by way of a first gate. The decoupling capacitor is also connected to a second gate. As such, the decoupling capacitor separates the first gate from the second gate. The decoupling capacitor may include a dielectric liner within a gate cut trench and a ferroelectric material over the dielectric liner. A second power rail may be connected to the decoupling capacitor by way of the second gate. The first gate and the second gate may be inline with respect thereto.
