17887533. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ming-Fa Chen of Taichung City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17887533 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The semiconductor device described in the abstract consists of two functional blocks, each with its own substrate, device layer, interconnect structure, and bonding patterns. The first functional block has irregularly arranged bonding patterns, while the second functional block is directly bonded to the first functional block with its bonding patterns in direct contact with the first bonding patterns.
- The semiconductor device includes two functional blocks with different components and bonding patterns.
- The first functional block has irregularly arranged bonding patterns, while the second functional block is directly bonded to the first functional block.
- The bonding patterns of the second functional block are in direct contact with the bonding patterns of the first functional block.
- Potential Applications
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
- Problems Solved
- Improved bonding between functional blocks
- Enhanced performance and reliability of semiconductor devices
- Benefits
- Increased efficiency in semiconductor device manufacturing
- Improved overall performance and reliability of electronic devices
- Enhanced functionality of integrated circuits
Original Abstract Submitted
A semiconductor device includes a first functional block and a second functional block. The first functional block includes a first substrate, a first device layer, a first interconnect structure and a plurality of first bonding patterns, and the first interconnect structure includes a plurality of first conductive patterns. The first bonding patterns are irregularly arranged. The second functional block is bonded to the first functional block. The second functional block includes a second substrate, a second device layer, a second interconnect structure and a plurality of second bonding patterns, and the second bonding patterns are in direct contact with the first bonding patterns.
