Pages that link to "Category:Julien Frougier of Albany NY (US)"
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The following pages link to Category:Julien Frougier of Albany NY (US):
View (previous 50 | next 50) (20 | 50 | 100 | 250 | 500)- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation) (← links)
- 17948877. NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (International Business Machines Corporation) (← links)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation) (← links)
- 17949579. SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (International Business Machines Corporation) (← links)
- 17932347. VERTICAL NAND WITH BACKSIDE STACKING simplified abstract (International Business Machines Corporation) (← links)
- International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract (← links)
- International business machines corporation (20240113023). Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract (← links)
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (← links)
- International business machines corporation (20240113162). MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (← links)
- International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (← links)
- International business machines corporation (20240120369). HIGH DENSITY TRENCH CAPACITOR simplified abstract (← links)
- International business machines corporation (20240121966). MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract (← links)
- 17955974. Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract (International Business Machines Corporation) (← links)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation) (← links)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation) (← links)
- 17957194. HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (International Business Machines Corporation) (← links)
- 17961774. HIGH DENSITY TRENCH CAPACITOR simplified abstract (International Business Machines Corporation) (← links)
- 17938667. MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract (International Business Machines Corporation) (← links)
- International business machines corporation (20240128318). SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT simplified abstract (← links)
- International business machines corporation (20240128331). BOTTOM ENHANCED LINER-LESS VIA CONTACT FOR REDUCED MOL RESISTANCE simplified abstract (← links)
- International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract (← links)
- International business machines corporation (20240128334). SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT simplified abstract (← links)
- International business machines corporation (20240128345). REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT simplified abstract (← links)
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract (← links)
- International business machines corporation (20240130142). RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS simplified abstract (← links)
- International business machines corporation (20240130256). PHASE CHANGE MEMORY CELL WITH HEATER simplified abstract (← links)
- Patent Applications Report for 19th Apr 2024 (← links)