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Category:H01L43/10
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Pages in category "H01L43/10"
The following 31 pages are in this category, out of 31 total.
1
- 17456088. Memory Device with Spin-Harvesting Structure simplified abstract (International Business Machines Corporation)
- 17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17526646. MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING simplified abstract (International Business Machines Corporation)
- 17534485. MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) WITH PRESERVED UNDERLYING DIELECTRIC LAYER simplified abstract (International Business Machines Corporation)
- 17541401. DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542696. SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643594. PILLAR MEMORY TOP CONTACT LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644349. MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644449. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH SEGMENTED BOTTOM ELECTRODE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17675876. MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND SPIN-ORBIT TORQUE (SOT) RANDOM ACCESS MEMORIES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17734455. MAGNETIC TUNNEL JUNCTION DEVICE AND STOCHASTIC COMPUTING SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17751898. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17806594. SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808561. MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808642. BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17814057. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17887042. SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17952808. MAGNETIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17956786. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices simplified abstract (Western Digital Technologies, Inc.)
- 17970788. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17981734. Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Memory (Mram) simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18064367. MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
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- US Patent Application 17804795. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE simplified abstract
- US Patent Application 17827998. MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 17900892. MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 17971775. MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT simplified abstract