17808642. BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Chih-Chao Yang of Glenmont NY (US)

Praneet Adusumilli of Somerset NJ (US)

BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17808642 titled 'BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE

Simplified Explanation

The abstract describes a memory device that consists of a magnetic tunnel junction pillar connected to a bottom electrode and a top electrode. The pillar is made up of multiple layers stacked vertically above the bottom electrode. Each layer, as well as the top and bottom electrodes, is formed at a specific bevel angle. The width of the bottommost portion of each layer is larger than the width of the topmost portion of the preceding layer. An encapsulation layer is present along the sidewalls of the top and bottom electrodes, as well as the layers in the pillar.

  • The memory device includes a magnetic tunnel junction pillar connected to electrodes.
  • The pillar is composed of stacked layers with varying widths.
  • Each layer, as well as the electrodes, is formed at a specific bevel angle.
  • An encapsulation layer is present along the sidewalls of the electrodes and layers.

Potential Applications

This technology can have various applications in the field of memory devices, including:

  • Non-volatile memory devices
  • Magnetic random-access memory (MRAM)
  • Data storage devices

Problems Solved

The innovation addresses the following problems:

  • Improving the performance and efficiency of memory devices
  • Enhancing the stability and reliability of memory storage
  • Enabling higher data storage capacity

Benefits

The technology offers several benefits, such as:

  • Increased memory device performance
  • Enhanced stability and reliability of data storage
  • Higher data storage capacity
  • Improved efficiency and energy consumption


Original Abstract Submitted

A memory device includes a magnetic tunnel junction pillar located between, and electrically connected to, a bottom electrode and a top electrode. The magnetic tunnel junction pillar is composed of a plurality of device layers vertically stacked above the bottom electrode. Each of the plurality of device layers, the top electrode, and the bottom electrode is formed at a first bevel angle. A bottommost portion of each of the plurality of device layers in the magnetic tunnel junction pillar has a width that is greater than a width of a topmost portion of each preceding device layer. An encapsulation layer is disposed along opposite sidewalls of the top electrode, opposite sidewalls of the bottom electrode, and opposite sidewalls of each of the plurality of device layers.

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