17956786. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices simplified abstract (Western Digital Technologies, Inc.)

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices

Organization Name

Western Digital Technologies, Inc.

Inventor(s)

Susumu Okamura of San Jose CA (US)

Quang Le of San Jose CA (US)

Brian R. York of San Jose CA (US)

Cherngye Hwang of San Jose CA (US)

Randy G. Simmons of San Jose CA (US)

Kuok San Ho of Emerald Hills CA (US)

Hisashi Takano of San Jose CA (US)

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 17956786 titled 'Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices

Simplified Explanation

The present disclosure relates to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices, particularly as part of a spin-orbit torque (SOT) device.

• The CoB layer is used in SOT devices, which can be part of sensors, writers, memory devices (such as MRAM), and storage devices (such as HDDs or tape drives).
• The SOT device includes a seed layer, a cap layer, a spin-orbit torque (SOT) layer, a nano layer (NL), and the ferromagnetic CoB layer between the seed layer and the cap layer.

Potential Applications

The technology can be applied in:

• Magnetic recording devices
• Memory devices
• Storage devices

Problems Solved

• Enhanced performance of SOT devices
• Improved data storage capabilities
• Increased efficiency in magnetic recording

Benefits

• Higher data storage density
• Faster data transfer rates
• Improved reliability and durability

Potential Commercial Applications

Optimized for:

• Data centers
• Consumer electronics
• Information technology industry

Possible Prior Art

One possible prior art could be the use of different materials in SOT devices for similar purposes.

How does the CoB layer compare to other materials in terms of performance in SOT devices?

The article does not provide a direct comparison with other materials used in SOT devices, leaving room for further research and analysis.

Are there any limitations or drawbacks associated with the use of the CoB layer in SOT devices?

The article does not mention any potential limitations or drawbacks of using the CoB layer, which could be important factors to consider in practical applications.

Original Abstract Submitted

Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.