17952808. MAGNETIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Joonmyoung Lee of Gwacheon-si (KR)
Junho Jeong of Hwaseong-si (KR)
YoungJun Cho of Hwaseong-si (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17952808 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation
The patent application describes a magnetic memory device that consists of several stacked layers on a substrate. These layers include a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern, and a capping pattern.
- The diffusion barrier pattern is made up of a first non-magnetic metal and oxygen.
- The non-magnetic pattern is made up of a second non-magnetic metal and oxygen.
- The first non-magnetic metal has a lower oxide formation energy compared to the second non-magnetic metal.
Potential applications of this technology:
- Magnetic memory devices can be used in various electronic devices such as computers, smartphones, and tablets.
- This technology can improve the performance and storage capacity of magnetic memory devices.
Problems solved by this technology:
- The diffusion barrier pattern helps prevent the migration of atoms between different layers, ensuring the stability and reliability of the magnetic memory device.
- The use of different non-magnetic metals with varying oxide formation energies helps optimize the performance and durability of the device.
Benefits of this technology:
- The stacked layers provide a compact and efficient design for magnetic memory devices.
- The diffusion barrier pattern and non-magnetic pattern contribute to the long-term stability and reliability of the device.
- The use of different non-magnetic metals with varying oxide formation energies allows for improved performance and energy efficiency.
Original Abstract Submitted
A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.
