US Patent Application 17971775. MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT simplified abstract

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MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT

Organization Name

TDK CORPORATION

Inventor(s)

Tomoyuki Sasaki of Tokyo (JP)

Zhenyao Tang of Tokyo (JP)

MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17971775 titled 'MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT

Simplified Explanation

The patent application describes a magneto-resistive element with specific layers and regions.

  • The magneto-resistive element consists of a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer.
  • The non-magnetic layer is positioned between the first and second ferromagnetic layers.
  • The non-magnetic layer has a first central region and a first outer circumferential region.
  • The first outer circumferential region, located on the outer side of the first central region, has a maximum thickness.
  • The average thickness of the first central region is smaller than the maximum thickness of the first outer circumferential region.


Original Abstract Submitted

A magneto-resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a first central region, and a first outer circumferential region disposed on an outer side of the first central region. A maximum thickness of the first outer circumferential region is greater than an average thickness of the first central region.

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