17675876. MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND SPIN-ORBIT TORQUE (SOT) RANDOM ACCESS MEMORIES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND SPIN-ORBIT TORQUE (SOT) RANDOM ACCESS MEMORIES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND SPIN-ORBIT TORQUE (SOT) RANDOM ACCESS MEMORIES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND SPIN-ORBIT TORQUE (SOT) RANDOM ACCESS MEMORIES
Organization Name
Inventor(s)
Roman Chepulskyy of Santa Clara CA (US)
Dmytro Apalkov of San Jose CA (US)
MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND SPIN-ORBIT TORQUE (SOT) RANDOM ACCESS MEMORIES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17675876 titled 'MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND SPIN-ORBIT TORQUE (SOT) RANDOM ACCESS MEMORIES
Simplified Explanation
The abstract describes a patent application for a magnetoresistive tunnel-junction (MTJ) memory element. The memory element includes a magnetic reference layer, a magnetic free layer, a tunneling barrier layer, a diffusion-blocking layer, and an oxide capping layer.
- The memory element consists of a magnetic reference layer, a magnetic free layer, a tunneling barrier layer, a diffusion-blocking layer, and an oxide capping layer.
- The tunneling barrier layer separates the magnetic reference layer and the magnetic free layer.
- The diffusion-blocking layer is made of materials such as bismuth, antimony, osmium, rhenium, tin, rhodium, indium, or cadmium.
- An oxide capping layer is provided on the diffusion-blocking layer.
- The oxide capping layer may contain materials such as strontium, scandium, beryllium, calcium, yttrium, zirconium, or hafnium.
Potential Applications
- Memory devices and storage systems
- Magnetic sensors and read heads
- Spintronics and quantum computing
Problems Solved
- Improves the performance and stability of MTJ memory elements
- Reduces the diffusion of atoms between layers
- Enhances the magnetic properties of the memory element
Benefits
- Higher data storage density
- Faster read and write operations
- Improved reliability and longevity of memory devices
Original Abstract Submitted
A magnetoresistive tunnel-junction (MTJ) memory element includes a magnetic reference layer (RL), a magnetic free layer (FL), a tunneling barrier layer, which extends between the magnetic RL and the magnetic FL, and a diffusion-blocking layer (DBL), which extends on the magnetic FL. The includes at least one material selected from a group consisting of bismuth (Bi), antimony (Sb), osmium (Os), rhenium (Re), tin (Sn), rhodium (Rh), indium (In), and cadmium (Cd). An oxide capping layer is also provided on the DBL. The oxide layer may include at least one of strontium (Sr), scandium (Sc), beryllium (Be), calcium (Ca), yttrium (Y), zirconium (Zr), and hafnium (Hf).
