Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 51 pages are in this category, out of 1,354 total.
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- US Patent Application 18361185. IC INCLUDING STANDARD CELLS AND SRAM CELLS simplified abstract
- US Patent Application 18361354. FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions simplified abstract
- US Patent Application 18361464. SEMICONDUCTOR DEVICE WITH FIN ISOLATION simplified abstract
- US Patent Application 18361501. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18361592. Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same simplified abstract
- US Patent Application 18361622. LEAKAGE REDUCTION METHODS AND STRUCTURES THEREOF simplified abstract
- US Patent Application 18361704. SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 18361717. INNER FILLER LAYER FOR MULTI-PATTERNED METAL GATE FOR NANOSTRUCTURE TRANSISTOR simplified abstract
- US Patent Application 18361743. CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18362862. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18363077. INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE simplified abstract
- US Patent Application 18363439. MULTI-LAYERED INSULATING FILM STACK simplified abstract
- US Patent Application 18365315. Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof simplified abstract
- US Patent Application 18365391. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18365420. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18366004. SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED BACKSIDE POWER RAIL simplified abstract
- US Patent Application 18366210. SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
- US Patent Application 18366297. Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the Same simplified abstract
- US Patent Application 18366352. Interconnect Features With Sharp Corners and Method Forming Same simplified abstract
- US Patent Application 18366370. STRUCTURE FOR REDUCING SOURCE/DRAIN CONTACT RESISTANCE AT WAFER BACKSIDE simplified abstract
- US Patent Application 18366469. CONTACT PLUG STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME simplified abstract
- US Patent Application 18366733. Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate simplified abstract
- US Patent Application 18366763. FinFET Device and Method of Forming Same simplified abstract
- US Patent Application 18366871. GATE STRUCTURE AND METHOD OF FORMING SAME simplified abstract
- US Patent Application 18446113. Semiconductor Structures And Methods Of Forming The Same simplified abstract
- US Patent Application 18446539. METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18446567. NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION simplified abstract
- US Patent Application 18446652. NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL simplified abstract
- US Patent Application 18446664. ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18446728. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- US Patent Application 18446753. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18446755. MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATION IN THIN FILM TRANSISTORS simplified abstract
- US Patent Application 18446905. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18446919. FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract
- US Patent Application 18446953. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE simplified abstract
- US Patent Application 18446960. DEVICES WITH STRAINED ISOLATION FEATURES simplified abstract
- US Patent Application 18446998. Optimized Proximity Profile for Strained Source/Drain Feature and Method of Fabricating Thereof simplified abstract
- US Patent Application 18447149. SILICON-GERMANIUM FINS AND METHODS OF PROCESSING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18447153. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18447239. HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER simplified abstract
- US Patent Application 18447344. SEMICONDUCTOR DEVICE INTERCONNECTS AND METHODS OF FORMATION simplified abstract
- US Patent Application 18447453. Ferroelectric Semiconductor Device and Method simplified abstract
- US Patent Application 18447467. CIRCUIT DEVICES WITH GATE SEALS simplified abstract
- US Patent Application 18447483. SOURCE/DRAIN FEATURES WITH IMPROVED STRAIN PROPERTIES simplified abstract
- US Patent Application 18447664. CONDUCTIVE RAIL STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18447680. TRANSISTOR SPACER STRUCTURES simplified abstract
- US Patent Application 18447855. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18447922. Self-Aligned Structure For Semiconductor Devices simplified abstract
- US Patent Application 18448013. SUPER JUNCTION STRUCTURE simplified abstract
- US Patent Application 18448285. SEMICONDUCTOR DEVICE simplified abstract