There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:G11C11/56
Subcategories
This category has the following 39 subcategories, out of 39 total.
A
B
C
F
G
H
J
M
N
P
S
T
U
W
X
Y
Pages in category "G11C11/56"
The following 179 pages are in this category, out of 179 total.
1
- 17454832. PHYSICALLY UNCLONABLE FUNCTION BASED ON A PHASE CHANGE MATERIAL ARRAY simplified abstract (International Business Machines Corporation)
- 17712238. SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847948. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17881009. MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894398. CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES simplified abstract (Micron Technology, Inc.)
- 17898392. DRIFT CORRECTION IN SLC AND MLC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17938373. PHOTONIC CONTENT-ADDRESSABLE MEMORY AND APPLICATIONS THEREOF simplified abstract (International Business Machines Corporation)
- 17942616. DISPLAY DEVICE simplified abstract (Samsung Display Co., Ltd.)
- 17948423. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17948520. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17948582. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18091174. OPERATION METHOD OF MEMORY SYSTEM, MEMORY SYSTEM AND ELECTRONIC DEVICE simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18124407. TRACKING AND UPDATING READ COMMAND VOLTAGE THRESHOLDS IN SOLID-STATE DRIVES simplified abstract (Kioxia Corporation)
- 18177877. MEMORY SYSTEM AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18194468. MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18197258. MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18201685. MEMORY PROGRAMMING METHOD, MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18204972. STORAGE DEVICES DETECTING INTERNAL TEMPERATURE AND DEFECTS BY USING TEMPERATURE SENSORS AND METHODS OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18234429. MEMORY DEVICES WITH A LOWER EFFECTIVE PROGRAM VERIFY LEVEL simplified abstract (Micron Technology, Inc.)
- 18238212. NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18331689. MEMORY DEVICE PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18333366. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18368158. CONDUCTANCE MODULATION IN COMPUTATIONAL MEMORY (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18379440. MEMORY DEVICE SENSORS simplified abstract (Micron Technology, Inc.)
- 18388461. TECHNOLOGIES FOR DYNAMICALLY MANAGING RESOURCES IN DISAGGREGATED ACCELERATORS simplified abstract (Intel Corporation)
- 18393334. MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18421741. MEMORY ARRAY WITH MULTIPLEXED DIGIT LINES simplified abstract (Micron Technology, Inc.)
- 18443221. BINARY NEURAL NETWORK HARDWARE APPARATUS simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
- 18447826. ONE-TIME PROGRAMMABLE MEMORY BIT CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18447997. FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18450413. MEMORY DEVICE FOR STORING PLURALITY OF DATA BITS AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18452573. MEMORY DEVICE AND STORAGE DEVICE simplified abstract (SK hynix Inc.)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18482644. Management of Programming Mode Transitions to Accommodate a Constant Size of Data Transfer between a Host System and a Memory Sub-System simplified abstract (Micron Technology, Inc.)
- 18525597. METHODS OF FORMING ELECTRONIC DEVICES INCLUDING RECESSED CONDUCTIVE STRUCTURES AND RELATED SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18581018. NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18582390. NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SK Hynix Inc.)
- 18586149. VARYING-POLARITY READ OPERATIONS FOR POLARITY-WRITTEN MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18621855. SYSTEMS AND METHODS TO STORE MULTI-LEVEL DATA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18636662. FERROELECTRIC STORAGE APPARATUS AND MANUFACTURING METHOD OF CONDUCTIVE PROBE simplified abstract (Resonac Corporation)
- 18643126. READING A MULTI-LEVEL MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18645697. MEMORY SYSTEM STORING MANAGEMENT INFORMATION AND METHOD OF CONTROLLING SAME simplified abstract (Kioxia Corporation)
- 18654302. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18662681. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18666886. SEMICONDUCTOR MEMORY DEVICE TO HOLD 5-BITS OF DATA PER MEMORY CELL simplified abstract (Kioxia Corporation)
- 18668021. ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 18669140. MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18675257. MEMORY SYSTEM AND MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18677727. MEMORY SYSTEM, CONTROL METHOD THEREOF, AND PROGRAM simplified abstract (Kioxia Corporation)
- 18734724. REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS simplified abstract (Micron Technology, Inc.)
- 18785752. MEMORY DEVICE FOR IMPLEMENTING MULTI-LEVEL MEMORY AND METHOD OF IMPLEMENTING MULTI-LEVEL MEMORY BY USING THE MEMORY DEVICE (Samsung Electronics Co., Ltd.)
- 18815516. MEMORY SYSTEM (Kioxia Corporation)
- 18818527. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18892390. NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAME (Samsung Electronics Co., Ltd.)
- 18893262. STORING A LOGICAL-TO-PHYSICAL MAPPING IN NAND MEMORY (Micron Technology, Inc.)
- 18948133. NONVOLATILE MEMORY AND WRITING METHOD (Kioxia Corporation)
- 18956073. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18959467. BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY (Yangtze Memory Technologies Co., Ltd.)
- 18965632. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE THAT INCLUDES A PLURALITY OF STRINGS (Kioxia Corporation)
- 18966286. FERROELECTRIC MEMORY AND DATA READING METHOD AND DATA WRITING METHOD THEREFOR, AND ELECTRONIC APPARATUS (CXMT Corporation)
- 18975937. ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS (Micron Technology, Inc.)
- 18987269. ERASE OPERATION WITH ELECTRON INJECTION FOR REDUCTION OF CELL-TO-CELL INTERFERENCE IN A MEMORY SUB-SYSTEM (MICRON TECHNOLOGY, INC.)
- 18988243. MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNIT (MICRON TECHNOLOGY, INC.)
- 19005835. DETERMINE OPTIMIZED READ VOLTAGE VIA IDENTIFICATION OF DISTRIBUTION SHAPE OF SIGNAL AND NOISE CHARACTERISTICS (MICRON TECHNOLOGY, INC.)
- 19013290. Assemblies Comprising Memory Cells and Select Gates; and Methods of Forming Assemblies (Micron Technology, Inc.)
E
H
I
- Intel corporation (20240113954). TECHNOLOGIES FOR DYNAMICALLY MANAGING RESOURCES IN DISAGGREGATED ACCELERATORS simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- International business machines corporation (20240119999). PHOTONIC CONTENT-ADDRESSABLE MEMORY AND APPLICATIONS THEREOF simplified abstract
- International business machines corporation (20250095764). CONDUCTANCE MODULATION IN COMPUTATIONAL MEMORY
- International Business Machines Corporation patent applications on April 11th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 20th, 2025
K
- Kioxia corporation (20240096429). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240312519). SEMICONDUCTOR MEMORY DEVICE TO HOLD 5-BITS OF DATA PER MEMORY CELL simplified abstract
- Kioxia corporation (20240312533). MEMORY SYSTEM, CONTROL METHOD THEREOF, AND PROGRAM simplified abstract
- Kioxia corporation (20240319875). TRACKING AND UPDATING READ COMMAND VOLTAGE THRESHOLDS IN SOLID-STATE DRIVES simplified abstract
- Kioxia corporation (20240321348). MEMORY SYSTEM AND MEMORY DEVICE simplified abstract
- Kioxia corporation (20240420765). SEMICONDUCTOR STORAGE DEVICE
- Kioxia corporation (20240420778). MEMORY SYSTEM
- Kioxia corporation (20250095726). NONVOLATILE SEMICONDUCTOR MEMORY DEVICE THAT INCLUDES A PLURALITY OF STRINGS
- Kioxia Corporation patent applications on December 19th, 2024
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 19th, 2024
- Kioxia Corporation patent applications on September 26th, 2024
M
- Micron technology, inc. (20240185897). Assemblies Comprising Memory Cells and Select Gates; and Methods of Forming Assemblies simplified abstract
- Micron technology, inc. (20240185915). OPTIMIZATION OF SOFT BIT WINDOWS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS simplified abstract
- Micron technology, inc. (20240203501). PROGRAMMING OPERATION USING CACHE REGISTER RELEASE IN A MEMORY SUB-SYSTEM simplified abstract
- Micron technology, inc. (20240242758). MEMORY ARRAY WITH MULTIPLEXED DIGIT LINES simplified abstract
- Micron technology, inc. (20240257841). DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE
- Micron technology, inc. (20240257841). DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240282370). MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS simplified abstract
- Micron technology, inc. (20240289226). MEMORY DEVICE WITH DYNAMIC PROCESSING LEVEL CALIBRATION simplified abstract
- Micron technology, inc. (20240304250). ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES simplified abstract
- Micron technology, inc. (20240312518). VARYING-POLARITY READ OPERATIONS FOR POLARITY-WRITTEN MEMORY CELLS simplified abstract
- Micron technology, inc. (20240312534). MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract
- Micron technology, inc. (20240321347). READING A MULTI-LEVEL MEMORY CELL simplified abstract
- Micron technology, inc. (20240321350). REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS simplified abstract
- Micron technology, inc. (20240428833). DRIFT COMPENSATION FOR CODEWORDS IN MEMORY
- Micron technology, inc. (20250013579). STORING A LOGICAL-TO-PHYSICAL MAPPING IN NAND MEMORY
- Micron technology, inc. (20250103215). ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS
- Micron technology, inc. (20250118364). MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNIT
- Micron technology, inc. (20250118365). ERASE OPERATION WITH ELECTRON INJECTION FOR REDUCTION OF CELL-TO-CELL INTERFERENCE IN A MEMORY SUB-SYSTEM
- Micron technology, inc. (20250131965). DETERMINE OPTIMIZED READ VOLTAGE VIA IDENTIFICATION OF DISTRIBUTION SHAPE OF SIGNAL AND NOISE CHARACTERISTICS
- Micron technology, inc. (20250149072). Assemblies Comprising Memory Cells and Select Gates; and Methods of Forming Assemblies
- MICRON TECHNOLOGY, INC. patent applications on April 10th, 2025
- MICRON TECHNOLOGY, INC. patent applications on April 24th, 2025
- Micron Technology, Inc. patent applications on August 1st, 2024
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on December 26th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 6th, 2025
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
- Micron Technology, Inc. patent applications on January 30th, 2025
- Micron Technology, Inc. patent applications on January 9th, 2025
- Micron Technology, Inc. patent applications on July 18th, 2024
- Micron Technology, Inc. patent applications on June 20th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on March 27th, 2025
- Micron Technology, Inc. patent applications on March 6th, 2025
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 12th, 2024
- Micron Technology, Inc. patent applications on September 19th, 2024
- Micron Technology, Inc. patent applications on September 26th, 2024
Q
S
- Samsung electronics co., ltd. (20240194243). NONVOLATILE MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240272808). MEMORY CONTROLLER, MEMORY SYSTEM INCLUDING THE SAME, AND OPERATION METHOD OF MEMORY CONTROLLER simplified abstract
- Samsung electronics co., ltd. (20240296884). STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20250014646). NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAME
- Samsung electronics co., ltd. (20250149084). MEMORY DEVICE FOR IMPLEMENTING MULTI-LEVEL MEMORY AND METHOD OF IMPLEMENTING MULTI-LEVEL MEMORY BY USING THE MEMORY DEVICE
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 8th, 2025
- Samsung Electronics Co., Ltd. patent applications on September 5th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 5th, 2024
- Sk hynix inc. (20240161829). MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE simplified abstract
- Sk hynix inc. (20240265980). MEMORY DEVICE PERFORMING PROGRAM OPERATION simplified abstract
- Sk hynix inc. (20240304225). MEMORY DEVICE FOR STORING PLURALITY OF DATA BITS AND METHOD OF OPERATING THE SAME simplified abstract
- Sk hynix inc. (20240311056). MEMORY CONTROLLER AND OPERATING METHOD THEREOF simplified abstract
- Sk hynix inc. (20240315022). MEMORY DEVICE AND STORAGE DEVICE simplified abstract
- SK hynix Inc. patent applications on August 8th, 2024
- SK hynix Inc. patent applications on January 30th, 2025
- SK hynix Inc. patent applications on May 16th, 2024
- SK hynix Inc. patent applications on September 12th, 2024
- SK hynix Inc. patent applications on September 19th, 2024
T
- Taiwan semiconductor manufacturing company, ltd. (20240203472). CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240242763). SYSTEMS AND METHODS TO STORE MULTI-LEVEL DATA simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240257871). PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20240257871). PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381656). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 1st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on July 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 20th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
U
- US Patent Application 17825048. HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES simplified abstract
- US Patent Application 17825193. LOW POWER MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES simplified abstract
- US Patent Application 18202584. DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING simplified abstract
- US Patent Application 18232386. METHODS OF CONFIGURING A MEMORY simplified abstract