18948133. NONVOLATILE MEMORY AND WRITING METHOD (Kioxia Corporation)
NONVOLATILE MEMORY AND WRITING METHOD
Organization Name
Inventor(s)
Tokumasa Hara of Kawasaki (JP)
Noboru Shibata of Kawasaki (JP)
NONVOLATILE MEMORY AND WRITING METHOD
This abstract first appeared for US patent application 18948133 titled 'NONVOLATILE MEMORY AND WRITING METHOD
Original Abstract Submitted
According to one embodiment, three bits stored in one memory cell of a nonvolatile memory correspond to three pages. In first page writing, a threshold voltage becomes within a first or second region base on a bit value. In second page writing, if being within the first region, it becomes within the first or fourth region; and if being within the second region, it becomes within the second or third region. In the third page writing, if being within the first region, it becomes within the first or sixth region; if being within the second region, it becomes within the second or seventh region; if being within the third region, it becomes within the third or eighth region; and if being within the fourth region, it becomes within the fourth or fifth region.