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18393334. MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS simplified abstract (Micron Technology, Inc.)

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MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS

Organization Name

Micron Technology, Inc.

Inventor(s)

Jiyun Li of Boise ID (US)

Yuan He of Boise ID (US)

MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18393334 titled 'MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS

Simplified Explanation: The patent application describes memory devices with tri-state memory cells that can store one of three voltage levels. These memory devices have input/output lines that carry binary signals based on the stored voltage levels.

Key Features and Innovation:

  • Memory devices with tri-state memory cells storing three voltage levels.
  • Input/output lines carrying binary signals based on stored voltage levels.
  • Banks with continuous arrays of tri-state memory cells accessible by bit lines.
  • Sub-word-line drivers interspersed between continuous arrays in the bank.

Potential Applications: The technology can be used in various memory storage applications, such as computer systems, mobile devices, and data storage devices.

Problems Solved: This technology addresses the need for efficient memory storage solutions that can store multiple voltage levels in memory cells.

Benefits:

  • Increased storage capacity with three voltage levels.
  • Improved data access and retrieval speed.
  • Enhanced memory efficiency in electronic devices.

Commercial Applications: The technology can be applied in the development of faster and more efficient computer systems, mobile devices, and data storage solutions, potentially impacting the semiconductor industry.

Prior Art: Readers can explore prior art related to tri-state memory cells, memory devices, and semiconductor memory technologies to understand the evolution of this innovation.

Frequently Updated Research: Researchers may find updated studies on semiconductor memory technologies, tri-state memory cells, and memory device advancements relevant to this technology.

Questions about Memory Devices with Tri-State Memory Cells: 1. What are the potential drawbacks of using tri-state memory cells in memory devices? 2. How does the integration of sub-word-line drivers improve the performance of memory devices with tri-state memory cells?


Original Abstract Submitted

Memory devices including tri-state memory cells are disclosed. A memory device may include a first tri-state cell that may store a first voltage level that is one of three voltage levels, a second tri-state cell that may store a second voltage level that is one of the three voltage levels, and three input/output lines that may access the memory device. The three input/output lines may carry three respective binary signals based on the first voltage level and the second voltage level. A memory device may include a bank including a number of continuous arrays of tri-state memory cells. Each of the tri-state memory cells may be accessible by a respective bit line. Groups of the bit lines may be associated with respective column-select lines. The bank may include a number of sub-word-line drivers interspersed between the number of continuous arrays. Associated systems and methods are also disclosed.

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