18393334. MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS simplified abstract (Micron Technology, Inc.)
MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS
Organization Name
Inventor(s)
MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18393334 titled 'MEMORY DEVICES INCLUDING TRI-STATE MEMORY CELLS
Simplified Explanation: The patent application describes memory devices with tri-state memory cells that can store one of three voltage levels. These memory devices have input/output lines that carry binary signals based on the stored voltage levels.
Key Features and Innovation:
- Memory devices with tri-state memory cells storing three voltage levels.
- Input/output lines carrying binary signals based on stored voltage levels.
- Banks with continuous arrays of tri-state memory cells accessible by bit lines.
- Sub-word-line drivers interspersed between continuous arrays in the bank.
Potential Applications: The technology can be used in various memory storage applications, such as computer systems, mobile devices, and data storage devices.
Problems Solved: This technology addresses the need for efficient memory storage solutions that can store multiple voltage levels in memory cells.
Benefits:
- Increased storage capacity with three voltage levels.
- Improved data access and retrieval speed.
- Enhanced memory efficiency in electronic devices.
Commercial Applications: The technology can be applied in the development of faster and more efficient computer systems, mobile devices, and data storage solutions, potentially impacting the semiconductor industry.
Prior Art: Readers can explore prior art related to tri-state memory cells, memory devices, and semiconductor memory technologies to understand the evolution of this innovation.
Frequently Updated Research: Researchers may find updated studies on semiconductor memory technologies, tri-state memory cells, and memory device advancements relevant to this technology.
Questions about Memory Devices with Tri-State Memory Cells: 1. What are the potential drawbacks of using tri-state memory cells in memory devices? 2. How does the integration of sub-word-line drivers improve the performance of memory devices with tri-state memory cells?
Original Abstract Submitted
Memory devices including tri-state memory cells are disclosed. A memory device may include a first tri-state cell that may store a first voltage level that is one of three voltage levels, a second tri-state cell that may store a second voltage level that is one of the three voltage levels, and three input/output lines that may access the memory device. The three input/output lines may carry three respective binary signals based on the first voltage level and the second voltage level. A memory device may include a bank including a number of continuous arrays of tri-state memory cells. Each of the tri-state memory cells may be accessible by a respective bit line. Groups of the bit lines may be associated with respective column-select lines. The bank may include a number of sub-word-line drivers interspersed between the number of continuous arrays. Associated systems and methods are also disclosed.