MEMORY ARRAY WITH MULTIPLEXED DIGIT LINES

Organization Name

Inventor(s)

Ferdinando Bedeschi of Biassono (MB) (IT)

Stefan Frederik Schippers of Peschiera del Garda (VR) (IT)

MEMORY ARRAY WITH MULTIPLEXED DIGIT LINES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240242758 titled 'MEMORY ARRAY WITH MULTIPLEXED DIGIT LINES

Simplified Explanation

The patent application describes methods, systems, and devices for a memory device with multiplexed digit lines. Memory cells in the device include storage and selection components to selectively couple the cells with digit lines.

The memory cell includes a storage component and a selection component with two transistors.
The first transistor is connected to a word line, and the second transistor is connected to a select line to couple the memory cell with a digit line.
A digit line multiplexing component, in conjunction with the selection component, supports a sense component common to a set of digit lines.
During a read operation, one digit line of the set is coupled with the sense component, while the remaining digit lines are isolated.

Key Features and Innovation

Memory cells with storage and selection components for multiplexed digit lines.
Use of transistors to selectively couple memory cells with digit lines.
Support for a sense component common to a set of digit lines.
Isolation of remaining digit lines during read operations.

Potential Applications

This technology can be applied in:

Memory devices
Integrated circuits
Data storage systems

Problems Solved

Efficient data retrieval in memory devices with multiplexed digit lines.
Simplified circuit design for memory cells.
Improved performance in data storage systems.

Benefits

Enhanced data access speed.
Reduced complexity in memory device design.
Increased efficiency in data storage and retrieval.

Commercial Applications

Title: "Innovative Memory Device Technology for Faster Data Access" This technology can be utilized in various commercial applications such as:

Consumer electronics
Computer systems
Data centers

Prior Art

Readers can explore prior art related to memory devices, multiplexed digit lines, and memory cell selection components in semiconductor technology patents and research papers.

Frequently Updated Research

Researchers are continually exploring advancements in memory device technology, including improvements in data access speed, circuit design, and integration with other electronic systems.

Questions about Memory Device Technology

How does this technology improve data access speed in memory devices?

This technology enhances data access speed by efficiently coupling memory cells with digit lines and supporting a sense component common to a set of digit lines.

What are the potential commercial applications of this memory device technology?

The potential commercial applications include consumer electronics, computer systems, and data centers, where faster data access and simplified circuit design are crucial for performance.

Original Abstract Submitted

methods, systems, and devices for a memory device with multiplexed digit lines are described. in some cases, a memory cell of the memory device may include a storage component and a selection component that includes two transistors. a first transistor may be coupled with a word line and a second transistor may be coupled with a select line to selectively couple the memory cell with a digit line. the selection component, in conjunction with a digit line multiplexing component, may support a sense component common to a set of digit lines. in some cases, the digit line of the set may be coupled with the sense component during a read operation, while the remaining digit lines of the set are isolated from the sense component.