Difference between revisions of "TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. patent applications published on November 30th, 2023"
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+ | '''Summary of the patent applications from TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023''' | ||
+ | |||
+ | Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) has recently filed several patents related to various aspects of semiconductor device manufacturing and circuit operation. These patents cover methods for forming interconnect structures, operating circuits, manufacturing integrated circuit devices, fabricating semiconductor devices, and creating high-voltage devices. Notable applications include improved optical coupling capabilities, enhanced performance and functionality of high-voltage devices, improved dielectric properties for multilayer structures, and manufacturing methods for CMOS image sensors. | ||
+ | |||
+ | Summary: | ||
+ | |||
+ | - TSMC has filed patents for methods of forming interconnect structures over substrates, including memory devices with transistors. | ||
+ | - They have also filed patents for methods of operating circuits, such as operational amplifiers, sampling switches, holding switches, and combined switches. | ||
+ | - TSMC's patents also cover methods for manufacturing integrated circuit devices using photonic structures and improved optical coupling capabilities. | ||
+ | - They have developed a semiconductor device with a metal gate layer, channel, and ferroelectric layer made of a hafnium oxide-based material with different phases. | ||
+ | - TSMC's patents also include methods for fabricating semiconductor devices, such as forming semiconductor fins, isolation regions, and recesses in substrates. | ||
+ | - They have developed a high-voltage device with specific structural features and doping configurations to enhance performance and functionality. | ||
+ | - TSMC's patents also cover multilayer structures with improved dielectric properties for use in electronic devices. | ||
+ | - They have developed semiconductor structures with capacitor structures and contact structures for improved electrical connections. | ||
+ | - TSMC's patents also include methods for manufacturing semiconductor structures for CMOS image sensors with improved performance and reliability. | ||
+ | - They have developed semiconductor structures with fins protruding from substrates and gate electrodes with conductive portions. | ||
+ | |||
+ | Notable Applications: | ||
+ | |||
+ | * Improved optical coupling capabilities in integrated circuit devices. | ||
+ | * Enhanced performance and functionality of high-voltage devices. | ||
+ | * Improved dielectric properties for multilayer structures in electronic devices. | ||
+ | * Manufacturing methods for CMOS image sensors with improved performance and reliability. | ||
+ | |||
+ | |||
+ | |||
+ | |||
==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023== | ==Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023== | ||
Revision as of 06:17, 5 December 2023
Summary of the patent applications from TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023
Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) has recently filed several patents related to various aspects of semiconductor device manufacturing and circuit operation. These patents cover methods for forming interconnect structures, operating circuits, manufacturing integrated circuit devices, fabricating semiconductor devices, and creating high-voltage devices. Notable applications include improved optical coupling capabilities, enhanced performance and functionality of high-voltage devices, improved dielectric properties for multilayer structures, and manufacturing methods for CMOS image sensors.
Summary:
- TSMC has filed patents for methods of forming interconnect structures over substrates, including memory devices with transistors. - They have also filed patents for methods of operating circuits, such as operational amplifiers, sampling switches, holding switches, and combined switches. - TSMC's patents also cover methods for manufacturing integrated circuit devices using photonic structures and improved optical coupling capabilities. - They have developed a semiconductor device with a metal gate layer, channel, and ferroelectric layer made of a hafnium oxide-based material with different phases. - TSMC's patents also include methods for fabricating semiconductor devices, such as forming semiconductor fins, isolation regions, and recesses in substrates. - They have developed a high-voltage device with specific structural features and doping configurations to enhance performance and functionality. - TSMC's patents also cover multilayer structures with improved dielectric properties for use in electronic devices. - They have developed semiconductor structures with capacitor structures and contact structures for improved electrical connections. - TSMC's patents also include methods for manufacturing semiconductor structures for CMOS image sensors with improved performance and reliability. - They have developed semiconductor structures with fins protruding from substrates and gate electrodes with conductive portions.
Notable Applications:
- Improved optical coupling capabilities in integrated circuit devices.
- Enhanced performance and functionality of high-voltage devices.
- Improved dielectric properties for multilayer structures in electronic devices.
- Manufacturing methods for CMOS image sensors with improved performance and reliability.
Contents
- 1 Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023
- 1.1 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824930)
- 1.2 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (18359900)
- 1.3 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME (18359892)
- 1.4 ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION (17827834)
- 1.5 EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME (18361891)
- 1.6 METHOD AND SYSTEM FOR SCANNING WAFER (18359871)
- 1.7 WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824926)
- 1.8 METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM (17824942)
- 1.9 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824936)
- 1.10 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME (18360855)
- 1.11 SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME (17824922)
- 1.12 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824924)
- 1.13 MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE (17827837)
- 1.14 HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME (17827824)
- 1.15 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (18232533)
- 1.16 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE (18360804)
- 1.17 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF (17824923)
- 1.18 CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE (18360849)
- 1.19 MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME (17829324)
Patent applications for TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. on November 30th, 2023
APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824930)
Main Inventor
CHUN-HSI HUANG
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (18359900)
Main Inventor
YI-CHUAN TENG
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME (18359892)
Main Inventor
CHING-KAI SHEN
ELECTRONIC CIRCUIT AND METHOD OF ERROR CORRECTION (17827834)
Main Inventor
CHIA-CHUN LIAO
EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME (18361891)
Main Inventor
FENG YUAN HSU
METHOD AND SYSTEM FOR SCANNING WAFER (18359871)
Main Inventor
PEI-HSUAN LEE
WET PROCESSING SYSTEM AND SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (17824926)
Main Inventor
YING-CHIEH MENG
METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM (17824942)
Main Inventor
YUAN-CHENG YANG
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824936)
Main Inventor
JHU-MIN SONG
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME (18360855)
Main Inventor
WEI-LUN CHEN
SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME (17824922)
Main Inventor
CHING-HUNG KAO
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (17824924)
Main Inventor
JUI-LIN CHU
MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE (17827837)
Main Inventor
HAI-DANG TRINH
HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME (17827824)
Main Inventor
YU-YING LAI
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (18232533)
Main Inventor
Ya-Yi Tsai
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE (18360804)
Main Inventor
CHUN-YEN PENG
METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE AND INTEGRATED CIRCUIT DEVICE THEREOF (17824923)
Main Inventor
WEI-KANG LIU
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF SEMICONDUCTOR DEVICE (18360849)
Main Inventor
BEI-SHING LIEN
MEMORY DEVICE WITH BACK-GATE TRANSISTOR AND METHOD OF FORMING THE SAME (17829324)
Main Inventor
MENG-HAN LIN