US Patent Application 18359892. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
CHING-KAI Shen of HSINCHU COUNTY (TW)
YI-CHUAN Teng of HSINCHU COUNTY (TW)
WEI-CHU Lin of HSINCHU CITY (TW)
HUNG-WEI Liang of NEW TAIPEI CITY (TW)
JUNG-KUO Tu of HSINCHU CITY (TW)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359892 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
Simplified Explanation
The patent application describes a method for fabricating a semiconductor structure.
- The method involves bonding a capping substrate over a sensing substrate.
- A through hole is formed in the capping substrate.
- A dielectric layer is formed over the capping substrate under a first vacuum level.
- A metal layer is formed over the dielectric layer under a second vacuum level.
- The second vacuum level is higher than the first vacuum level.
Original Abstract Submitted
The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.
