US Patent Application 18360855. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360855 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a semiconductor structure with a fin protruding from a substrate.
- The fin consists of multiple layers of semiconductive material and a dielectric layer.
- The structure also includes a gate electrode with two conductive portions.
- The first conductive portion extends along the sidewalls of the first semiconductive layer and the upper surface of the substrate.
- The second conductive portion is isolated from the first conductive portion and extends along the sidewalls of the second semiconductive layer and the upper surface of the fin.
Original Abstract Submitted
A semiconductor structure includes: a substrate and a fin protruding from the substrate. The fin comprises a first semiconductive layer over the substrate, a second semiconductive layer over the first semiconductive layer, and a dielectric layer disposed between the first semiconductive layer and the second semiconductive layer and electrically isolated from the first semiconductive layer and the second semiconductive layer. The semiconductor structure further includes a gate electrode including: a first conductive portion extending along two opposite sidewalls of the first semiconductive layer and along an upper surface of the substrate; and a second conductive portion electrically isolated from the first conductive portion and extending along two opposite sidewalls of the second semiconductive layer and along an upper surface of the fin.
