US Patent Application 17824936. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

JHU-MIN Song of NANTOU COUNTY (TW)

CHIEN-CHIH Chou of NEW TAIPEI CITY (TW)

YU-CHANG Jong of HSINCHU CITY (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824936 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor structure with two FET devices on a substrate.

  • The substrate is divided into two regions, with one FET device in each region.
  • The first FET device has a first isolation structure, a first gate electrode, and a first gate dielectric layer with a certain thickness.
  • The second FET device has multiple fin structures, second isolation structures, a second gate electrode, and a second gate dielectric layer with a smaller thickness than the first.
  • The innovation lies in the difference in gate dielectric layer thickness between the two FET devices.


Original Abstract Submitted

A semiconductor structure includes a substrate, a first FET device and a second FET device. The substrate has a first region and a second region. The first FET device is in the first region, and the second FET device is in the second region. The first FET device includes a first isolation structure, a first gate electrode disposed over a portion of the first isolation structure, and a first gate dielectric layer between the substrate and the first gate electrode. The first gate dielectric layer has a first thickness. The second FET device includes a plurality of fin structures, a plurality of second isolation structures, a second gate electrode over the plurality of fin structures, and a second gate dielectric layer between the second gate electrode and the plurality of fin structures. The second gate dielectric layer has a second thickness. The second thickness is less than the first thickness.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_17824936._SEMICONDUCTOR_STRUCTURE_AND_METHOD_FOR_FORMING_THE_SAME_simplified_abstract&oldid=11312"