US Patent Application 17827824. HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME simplified abstract

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HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

YU-YING Lai of CHANGHUA COUNTY (TW)

PO-CHIH Su of NEW TAIPEI CITY (TW)

YU-TING Wei of NEW TAIPEI CITY (TW)

RUEY-HSIN Liu of HSINCHU CITY (TW)

HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17827824 titled 'HIGH VOLTAGE DEVICE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The abstract describes a high-voltage device with specific structural features and doping configurations. Here are the key points:

  • The device consists of a substrate, a gate structure, a drain region, multiple source regions, and multiple doped regions.
  • The gate structure is made up of alternating first and second portions, with the first portions being wider than the second portions.
  • The source regions are located next to the first portions of the gate structure, while the doped regions are located next to the second portions.
  • The drain region and source regions are doped with a certain type of conductivity, while the doped regions have a complementary type of conductivity.
  • The purpose of this configuration is to enhance the performance and functionality of the high-voltage device.


Original Abstract Submitted

A high-voltage device includes a substrate, a gate structure over the substrate, a drain region disposed on a first side of the gate structure, a plurality of source regions disposed on a second side of the gate structure, and a plurality of doped regions disposed on the second side of the gate structure. The gate structure includes a plurality of first portions and a plurality of second portions alternately arranged. Width of the first portions are greater than widths of the second portions. The source regions are adjacent to the first portions of the gate structures, and the doped regions are adjacent to the second portions of the gate structure. The drain region and the source regions include dopants of a first conductivity type, and the doped regions include dopants of a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.

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