US Patent Application 17824924. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
JUI-LIN Chu of HSINCHU CITY (TW)
SZU-YU Wang of HSINCHU CITY (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17824924 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor structure with a capacitor structure and a contact structure.
- The capacitor structure consists of an electrode layer, a protective dielectric layer, and a capacitor dielectric layer.
- The protective dielectric layer covers the top surface of the electrode layer.
- The capacitor dielectric layer is located on top of the protective oxide layer.
- The contact structure penetrates the protective oxide layer and establishes an electrical connection with the electrode layer.
Original Abstract Submitted
A semiconductor structure includes a capacitor structure and a contact structure. The capacitor structure includes an electrode layer, a protective dielectric layer, and a capacitor dielectric layer. The protective dielectric layer covers a top surface of the electrode layer. The capacitor dielectric layer is on the protective oxide layer. The contact structure penetrates the protective oxide layer and electrically connects to the electrode layer.
