US Patent Application 18359900. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
YI-CHUAN Teng of HSINCHU COUNTY (TW)
CHING-KAI Shen of HSINCHU COUNTY (TW)
JUNG-KUO Tu of HSINCHU CITY (TW)
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359900 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Simplified Explanation
The patent application describes a method for manufacturing a semiconductor structure.
- A first substrate with a top surface is received.
- A semiconductor layer is formed over the first substrate.
- A cavity is formed at the top surface of the semiconductor layer.
- A second substrate is bonded over the first substrate to cover the semiconductor layer.
- The second substrate has a through hole connected to the cavity of the semiconductor layer.
- A eutectic sealing structure is formed on the second substrate to cover the through hole.
- The eutectic sealing structure includes a first metal layer and a second metal layer eutectically bonded on the first metal layer.
Original Abstract Submitted
A method for manufacturing a semiconductor structure is provided. The method includes the operations as follows. A first substrate having a top surface is received. A semiconductor layer is formed over the first substrate. A cavity is formed at the top surface of the semiconductor layer. A second substrate is bonded over the first substrate to cover the semiconductor layer. The second substrate has a through hole connected to the cavity of the semiconductor layer. A eutectic sealing structure is formed on the second substrate to cover the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectically bonded on the first metal layer.
