US Patent Application 17824922. SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME simplified abstract

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SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

CHING-HUNG Kao of TAINAN CITY (TW)

JING-JYU Chou of TAICHUNG CITY (TW)

SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824922 titled 'SEMICONDUCTOR STRUCTURE OF BACKSIDE ILLUMINATION CMOS IMAGE SENSOR AND METHOD FOR FORMING THE SAME

Simplified Explanation

The present disclosure describes a method of manufacturing a semiconductor structure for a CMOS image sensor.

  • The method starts by providing a substrate and growing an epitaxial layer on it.
  • A barrier layer is then formed on the epitaxial layer.
  • A trench is formed in the epitaxial layer, and the epitaxial layer is oxidized to form a liner layer.
  • A region for a photodiode is defined, and dopants are implanted around the trench to form a protective layer with a reduced thickness compared to the photodiode region.
  • An oxide layer is formed in the trench, and an annealing operation is performed to densify the oxide layer, while keeping the protective layer spaced from the photodiode region.
  • Finally, the photodiode is formed in the defined region.

This method allows for the manufacturing of a CMOS image sensor with improved performance and reliability.


Original Abstract Submitted

The present disclosure provides a method of manufacturing a semiconductor structure of a CMOS image sensor. The method includes providing a substrate; growing an epitaxial layer on the substrate; forming a barrier layer on the epitaxial layer; forming a trench extending into the epitaxial layer; oxidizing the epitaxial layer to form a liner layer; defining a region of a photodiode and a first dopant thickness; implanting dopants into the epitaxial layer around a sidewall of the trench to form a protective layer with a second dopant thickness less than the first dopant thickness; forming an oxide layer in the trench; performing an annealing operation to densify the oxide layer to form a densified oxide layer, wherein the protective layer, expanded from the second dopant thickness to a third dopant thickness less than the first dopant thickness, is kept spaced from the region; and forming the photodiode in the region.

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