US Patent Application 18361891. EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME simplified abstract

EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

FENG YUAN Hsu of YILAN COUNTY (TW)

TRAN-HUI Shen of YUNLIN COUNTY (TW)

CHING-HSIANG Hsu of HSINCHU CITY (TW)

EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361891 titled 'EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME

Simplified Explanation

- The patent application describes a photomask and a method of manufacturing it. - The method involves several steps, including providing a substrate. - A reflective layer is then deposited over the substrate, which includes molybdenum layers and silicon layers. - A capping layer is deposited over the reflective layer. - An absorption layer is then deposited over the capping layer. - Finally, a treatment is performed to form a border region in the reflective layer, which includes molybdenum silicide. - The purpose of this innovation is to improve the functionality and performance of photomasks used in various industries, such as semiconductor manufacturing.

Original Abstract Submitted

A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.