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Category:H01L29/161
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Pages in category "H01L29/161"
The following 33 pages are in this category, out of 33 total.
1
- 17523711. CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS simplified abstract (Intel Corporation)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17902111. MULTI BRIDGE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18088890. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18110950. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18340440. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378874. SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18487177. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
- 18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516408. Fin Loss Prevention simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)
I
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- Samsung electronics co., ltd. (20240105776). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128321). SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
U
- US Patent Application 17752211. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18363350. Different Source/Drain Profiles for N-type FinFETs and P-type FinFETs simplified abstract
- US Patent Application 18446652. NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL simplified abstract