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Category:H01L21/764
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This category has the following 41 subcategories, out of 41 total.
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Pages in category "H01L21/764"
The following 98 pages are in this category, out of 98 total.
1
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17971256. SEMICONDUCTOR DEVICES HAVING AIR SPACER simplified abstract (Samsung Electronics Co., Ltd.)
- 18054970. METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158263. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18391835. SEMICONDUCTOR DEVICE INCLUDING SPACER STRUCTURE HAVING AIR GAP simplified abstract (Samsung Electronics Co., Ltd.)
- 18403495. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18405526. FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18432377. REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18442794. SEMICONDUCTOR DEVICE ISOLATION FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18500201. SEMICONDUCTOR DEVICE WITH SHALLOW TRENCH ISOLATION PROTECTION LAYER (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517565. A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18609982. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18658521. AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18660318. Adjusting Work Function Through Adjusting Deposition Temperature simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18666835. SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18667509. STRUCTURE FOR FRINGING CAPACITANCE CONTROL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669052. AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671580. Air Gap Seal for Interconnect Air Gap and Method of Fabricating Thereof simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18673632. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18674249. REDUCING PARASITIC CAPACITANCE IN FIELD-EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18755342. MULTI-GATE DEVICE AND RELATED METHODS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18817491. AIR BRIDGE PREPARATION METHOD, QUANTUM CHIP, AND QUANTUM COMPUTER (Tencent Technology (Shenzhen) Company Limited)
- 18903368. METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR (STMicroelectronics International N.V.)
- 18906944. METHODS OF FORMING MEMORY STRUCTURES FOR THREE-DIMENSIONAL NONVOLATILE MEMORY (IMEC VZW)
- 18974295. SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD SEALING THE AIR GAP (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18976999. SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREOF (Kioxia Corporation)
- 18999095. SOURCE/DRAIN FEATURE SEPARATION STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 19002450. CUT METAL GATE REFILL WITH VOID (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19011229. Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry (Micron Technology, Inc.)
I
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- Micron technology, inc. (20250142875). Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry
- Micron Technology, Inc. patent applications on April 3rd, 2025
- Micron Technology, Inc. patent applications on March 14th, 2024
- Micron Technology, Inc. patent applications on May 1st, 2025
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- Samsung electronics co., ltd. (20240215225). SEMICONDUCTOR DEVICE INCLUDING SPACER STRUCTURE HAVING AIR GAP simplified abstract
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
- Stmicroelectronics international n.v. (20250113511). METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
- STMicroelectronics International N.V. patent applications on April 3rd, 2025
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- Taiwan semiconductor manufacturing co., ltd. (20240186372). SELF-ALIGNED CONTACT AIR GAP FORMATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222427). SEMICONDUCTOR DEVICE ISOLATION FEATURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312832). REDUCING PARASITIC CAPACITANCE IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312876). Air Gap Seal for Interconnect Air Gap and Method of Fabricating Thereof simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313082). AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250105054). SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD SEALING THE AIR GAP
- Taiwan semiconductor manufacturing co., ltd. (20250125150). CUT METAL GATE REFILL WITH VOID
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 17th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 4th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 6th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 27th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240136418). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178052). REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234540). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297080). Adjusting Work Function Through Adjusting Deposition Temperature simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297235). AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304497). STRUCTURE FOR FRINGING CAPACITANCE CONTROL simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321890). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347627). MULTI-GATE DEVICE AND RELATED METHODS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379407). TRENCH FILLING THROUGH REFLOWING FILLING MATERIAL simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379813). Semiconductor Devices with Air Gaps and the Method Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379859). Device Structure with Reduced Leakage Current simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250006549). FETS and Methods of Forming FETS
- Taiwan semiconductor manufacturing company, ltd. (20250006560). MULTI-LAYERED INSULATING FILM STACK
- Taiwan semiconductor manufacturing company, ltd. (20250063744). TRENCH CAPACITOR PROFILE TO DECREASE SUBSTRATE WARPAGE
- Taiwan semiconductor manufacturing company, ltd. (20250072065). FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD
- Taiwan semiconductor manufacturing company, ltd. (20250133716). SOURCE/DRAIN FEATURE SEPARATION STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250149379). SEMICONDUCTOR DEVICE WITH SHALLOW TRENCH ISOLATION PROTECTION LAYER
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 24th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 20th, 2025
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 27th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on January 2nd, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on July 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 30th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on October 17th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 12th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 26th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 5th, 2024
- Tencent Technology (Shenzhen) Company Limited (20240423103). AIR BRIDGE PREPARATION METHOD, QUANTUM CHIP, AND QUANTUM COMPUTER
U
- US Patent Application 17826604. SEMICONDUCTOR DEVICE STRUCTURE WITH AIR GAP AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 18231912. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME simplified abstract
- US Patent Application 18358708. Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same simplified abstract
- US Patent Application 18360617. FINFET STRUCTURE WITH CONTROLLED AIR GAPS simplified abstract
- US Patent Application 18363439. MULTI-LAYERED INSULATING FILM STACK simplified abstract
- US Patent Application 18365654. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18447183. SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD OF FABRICATING THEREOF simplified abstract