Stmicroelectronics international n.v. (20250113511). METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
Organization Name
stmicroelectronics international n.v.
Inventor(s)
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
This abstract first appeared for US patent application 20250113511 titled 'METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
Original Abstract Submitted
to manufacture a bipolar transistor, a first stack of layers including a first layer made of the material of the base of the bipolar transistor is formed between second and third insulating layers. a first cavity is then formed crossing the first stack in such a way as to reach the substrate. the forming of the first cavity includes an etching of no layer covering the first layer other than the third layer. a first portion of the collector of the bipolar transistor and a second portion of the base of the bipolar transistor are then formed in the first cavity.