SEMICONDUCTOR DEVICE ISOLATION FEATURES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

SEMICONDUCTOR DEVICE ISOLATION FEATURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222427 titled 'SEMICONDUCTOR DEVICE ISOLATION FEATURES

The device described in the abstract includes a first source/drain region, a second source/drain region, an inter-layer dielectric (ILD) layer, first and second source/drain contacts, and an isolation feature between the contacts.

The first source/drain contact is connected to the first source/drain region, while the second source/drain contact is connected to the second source/drain region.
The isolation feature includes a dielectric liner surrounding a void, separating the first and second source/drain contacts.
The dielectric liner and void in the isolation feature help prevent electrical interference between the contacts.

Potential Applications: This technology could be used in semiconductor devices, integrated circuits, and other electronic components where precise isolation between different regions is necessary.

Problems Solved: This innovation addresses the issue of electrical interference between source/drain contacts in semiconductor devices, improving overall performance and reliability.

Benefits: Improved device performance, enhanced reliability, and reduced risk of electrical failures in electronic components.

Commercial Applications: This technology could be valuable in the semiconductor industry for manufacturing advanced electronic devices with higher performance and reliability.

Questions about the technology: 1. How does the dielectric liner in the isolation feature contribute to preventing electrical interference between the source/drain contacts? 2. What are the potential challenges in implementing this technology in mass production of semiconductor devices?

Original Abstract Submitted

in an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ild) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ild layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ild layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.