Category:Jung-Hung Chang of Hsinchu (TW)
Jung-Hung Chang
Jung-Hung Chang from Hsinchu (TW) has applied for patents in technology areas such as H01L29/06, H01L21/764, H01L29/08 with taiwan semiconductor manufacturing company, ltd..
Patents
Pages in category "Jung-Hung Chang of Hsinchu (TW)"
The following 11 pages are in this category, out of 11 total.
1
- 17693204. INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18343680. DEVICE HAVING HYBRID NANOSHEET STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18405526. FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18522687. UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18584862. GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240096895). UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194758). GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282838). DEVICE HAVING HYBRID NANOSHEET STRUCTURE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379855). CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250072065). FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD