MULTI-GATE DEVICE AND RELATED METHODS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Tsung-Lin Lee of Hsinchu City (TW)

Choh Fei Yeap of Hsinchu City (TW)

Da-Wen Lin of Hsinchu City (TW)

Chih-Chieh Yeh of Taipei City (TW)

MULTI-GATE DEVICE AND RELATED METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18755342 titled 'MULTI-GATE DEVICE AND RELATED METHODS

The method described in the abstract involves fabricating a device with a fin structure that includes multiple semiconductor channel layers and dummy layers.

The method includes forming a trench in the source/drain region of the device to expose the lateral surfaces of the semiconductor channel layers and dummy layers.
A dummy layer recess process is performed to etch the ends of the dummy layers, creating recesses along the sidewall of the trench.
A cap layer is then formed along the exposed lateral surfaces of the semiconductor channel layers and within the recesses.

Potential Applications: - This technology can be used in the fabrication of advanced semiconductor devices with improved performance and efficiency. - It can be applied in the manufacturing of high-speed and low-power electronic devices.

Problems Solved: - The method addresses the need for enhanced control and optimization of semiconductor channel layers in device fabrication. - It provides a solution for improving the performance and reliability of semiconductor devices.

Benefits: - Improved device performance and efficiency. - Enhanced control over semiconductor channel layers. - Increased reliability of semiconductor devices.

Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology has potential commercial applications in the semiconductor industry for manufacturing high-performance electronic devices. It can lead to the development of faster and more energy-efficient devices, catering to various sectors such as telecommunications, computing, and consumer electronics.

Questions about Advanced Semiconductor Device Fabrication Method: 1. How does this method contribute to the advancement of semiconductor technology? This method enhances the performance and efficiency of semiconductor devices by providing better control over the semiconductor channel layers.

2. What are the potential implications of this technology in the semiconductor industry? This technology can lead to the development of faster and more reliable electronic devices, catering to a wide range of applications in various sectors.

Original Abstract Submitted

A method of fabricating a device includes providing a fin extending from a substrate, where the fin includes an epitaxial layer stack having a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing a portion of the epitaxial layer stack within a source/drain region of the semiconductor device to form a trench in the source/drain region that exposes lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers. After forming the trench, in some examples, the method further includes performing a dummy layer recess process to laterally etch ends of the plurality of dummy layers to form first recesses along a sidewall of the trench. In some embodiments, the method further includes conformally forming a cap layer along the exposed lateral surfaces of the plurality of semiconductor channel layers and within the first recesses.