SEMICONDUCTOR DEVICE ISOLATION FEATURES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

SEMICONDUCTOR DEVICE ISOLATION FEATURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18442794 titled 'SEMICONDUCTOR DEVICE ISOLATION FEATURES

The abstract of this patent application describes a device with multiple source/drain regions, inter-layer dielectric (ILD) layers, source/drain contacts, and an isolation feature including a dielectric liner and a void.

The device includes a first source/drain region and a second source/drain region.
There is an ILD layer over the source/drain regions.
Source/drain contacts extend through the ILD layer to connect to the respective regions.
An isolation feature, consisting of a dielectric liner and a void, separates the source/drain contacts.

Potential Applications: - This technology can be used in semiconductor devices for improved performance and reliability. - It can be applied in integrated circuits for advanced electronic systems.

Problems Solved: - Enhances the connectivity and isolation of source/drain regions in semiconductor devices. - Improves the overall efficiency and functionality of integrated circuits.

Benefits: - Increased performance and reliability of semiconductor devices. - Enhanced integration and miniaturization capabilities in electronic systems.

Commercial Applications: - This technology can be utilized in the manufacturing of high-performance electronic devices such as smartphones, computers, and IoT devices.

Questions about the Technology: 1. How does the isolation feature with the dielectric liner and void improve the performance of the device? 2. What are the specific advantages of having source/drain contacts extending through the ILD layer?

Frequently Updated Research: - Stay updated on advancements in semiconductor device technology and integrated circuit design for potential improvements in this area.

Original Abstract Submitted

In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.