Category:Taiwan Semiconductor Manufacturing Company, Ltd.
Contents
Taiwan Semiconductor Manufacturing Company, Ltd.
Overview
Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC) is the world's largest independent semiconductor foundry, based in Taiwan. It provides semiconductor manufacturing services and is a key player in the global electronics supply chain.
History
Founded in 1987 by Morris Chang, TSMC pioneered the pure-play foundry business model, where it focuses solely on manufacturing customers' designs, unlike integrated device manufacturers. It played a significant role in establishing Taiwan as a center for semiconductor manufacturing.
Operations
TSMC offers a wide range of semiconductor manufacturing services, including advanced process technologies and comprehensive design enablement services. It is renowned for its advanced and efficient manufacturing processes, producing chips for leading tech companies worldwide.
Key Technologies
- Advanced Process Technologies: Specializes in cutting-edge processes like 7-nanometer and 5-nanometer technologies.
- Research and Development: Heavily invests in R&D to advance semiconductor manufacturing techniques.
- Global Operations: Operates manufacturing facilities in Taiwan, China, and the United States, and has offices worldwide.
Impact
TSMC plays a pivotal role in the global technology sector. It enables innovations in various industries, including computing, mobile devices, networking, and automotive. Its manufacturing capabilities are crucial for many major technology companies.
Challenges
The company faces challenges such as rapidly evolving technology, intense competition, geopolitical tensions, and supply chain complexities.
External Links
- [Official Website of Taiwan Semiconductor Manufacturing Company, Ltd.]
Pages in category "Taiwan Semiconductor Manufacturing Company, Ltd."
The following 29 pages are in this category, out of 843 total.
(previous page) (next page)U
- US Patent Application 18447618. Method of Gap Filling for Semiconductor Device simplified abstract
- US Patent Application 18447638. MEMORY DEVICE WITH IMPROVED ANTI-FUSE READ CURRENT simplified abstract
- US Patent Application 18447664. CONDUCTIVE RAIL STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18447680. TRANSISTOR SPACER STRUCTURES simplified abstract
- US Patent Application 18447685. PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT simplified abstract
- US Patent Application 18447722. BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE simplified abstract
- US Patent Application 18447769. DUAL-SIDED ROUTING IN 3D SIP STRUCTURE simplified abstract
- US Patent Application 18447810. METHOD FOR IMPROVED POLYSILICON ETCH DIMENSIONAL CONTROL simplified abstract
- US Patent Application 18447855. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18447869. SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING simplified abstract
- US Patent Application 18447871. Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via simplified abstract
- US Patent Application 18447881. INTEGRATED CIRCUIT WITH BACKSIDE TRENCH FOR METAL GATE DEFINITION simplified abstract
- US Patent Application 18447911. DEPOSITION SYSTEM AND METHOD simplified abstract
- US Patent Application 18447912. MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM simplified abstract
- US Patent Application 18447922. Self-Aligned Structure For Semiconductor Devices simplified abstract
- US Patent Application 18447927. SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT AND METHOD OF MAKING simplified abstract
- US Patent Application 18447943. Plasma-Assisted Etching Of Metal Oxides simplified abstract
- US Patent Application 18447953. Isolation Structures Of Semiconductor Devices simplified abstract
- US Patent Application 18447965. Polysilicon Removal In Word Line Contact Region Of Memory Devices simplified abstract
- US Patent Application 18447968. Storage Layers For Wafer Bonding simplified abstract
- US Patent Application 18447979. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING STAGGERED GATE-STUB-SIZE PROFILE AND SYSTEM FOR SAME simplified abstract
- US Patent Application 18448005. CELL STRUCTURE WITH INTERMEDIATE METAL LAYERS FOR POWER SUPPLIES simplified abstract
- US Patent Application 18448013. SUPER JUNCTION STRUCTURE simplified abstract
- US Patent Application 18448014. ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION simplified abstract
- US Patent Application 18448026. REPELLENT ELECTRODE FOR ELECTRON REPELLING simplified abstract
- US Patent Application 18448028. METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING BURIED CONDUCTIVE FINGERS simplified abstract
- US Patent Application 18448100. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18448125. DIAGONAL VIA STRUCTURE simplified abstract
- US Patent Application 18448152. NON-VOLATILE MEMORY CIRCUIT AND METHOD simplified abstract