US Patent Application 18448005. CELL STRUCTURE WITH INTERMEDIATE METAL LAYERS FOR POWER SUPPLIES simplified abstract

CELL STRUCTURE WITH INTERMEDIATE METAL LAYERS FOR POWER SUPPLIES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Li-Chun Tien of Tainan City (TW)]]

[[Category:Chih-Liang Chen of Hsinchu City (TW)]]

[[Category:Hui-Zhong Zhuang of Kaohsiung City (TW)]]

[[Category:Shun Li Chen of Tainan City (TS)]]

[[Category:Ting Yu Chen of Hsinchu City (TW)]]

CELL STRUCTURE WITH INTERMEDIATE METAL LAYERS FOR POWER SUPPLIES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18448005 titled 'CELL STRUCTURE WITH INTERMEDIATE METAL LAYERS FOR POWER SUPPLIES

Simplified Explanation

The abstract describes a cell on an integrated circuit that includes various components such as a fin structure, intermediate fin structure connection metal track, and a first intermediate gate connection metal track.

• The cell on the integrated circuit includes a fin structure, which is a component of the circuit.
• An intermediate fin structure connection metal track is present in an intermediate fin structure connection metal layer above the fin structure. This track is connected to the fin structure.
• A first intermediate gate connection metal track is located in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer. This track is connected to the intermediate fin structure connection metal track.
• A first power supply terminal is connected to the first intermediate gate connection metal track, providing power to the circuit.

Original Abstract Submitted

A cell on an integrated circuit is provided. The cell includes: a fin structure; an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and a first intermediate gate connection metal track disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track. A first power supply terminal is connected to the first intermediate gate connection metal track.