US Patent Application 18448028. METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING BURIED CONDUCTIVE FINGERS simplified abstract
Contents
METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING BURIED CONDUCTIVE FINGERS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Chih-Liang Chen of Hsinchu (TW)]]
[[Category:Guo-Huei Wu of Hsinchu (TW)]]
[[Category:Li-Chun Tien of Hsinchu (TW)]]
METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING BURIED CONDUCTIVE FINGERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448028 titled 'METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING BURIED CONDUCTIVE FINGERS
Simplified Explanation
- The patent application describes a semiconductor device that includes a semiconductor substrate with active regions and a first buried metal layer below the substrate. - The first buried metal layer consists of a first buried conductive rail, a first set of buried conductive fingers extending from the rail, and a second set of buried conductive fingers interleaved with the first set. - Both sets of buried conductive fingers extend beneath multiple active regions. - The purpose of the buried conductive fingers is to distribute different voltages, such as an ungated reference voltage (TVDD) and a gated reference voltage (VVDD), in a header circuit. - This distribution is achieved with reduced resistance, improving the efficiency of the circuit.
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate with active regions and a first buried metal layer provided below the semiconductor substrate. The first buried metal layer includes a first buried conductive rail, a first set of buried conductive fingers that extends from the first buried conductive rail, and a second set of buried conductive fingers that are interleaved with the first set of buried conductive fingers. The first set and the second set of buried conductive fingers extends beneath more than one of the active regions. In this manner, the first set and the second set of buried conductive fingers can be utilized to distribute different voltages, such as an ungated reference voltage TVDD and a gated reference voltage VVDD in a header circuit with reduced resistance.
