US Patent Application 18447869. SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING simplified abstract

SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chih-Kai Yang of Hsinchu (TW)

Yu-Tien Shen of Hsinchu (TW)

Hsiang-Ming Chang of Hsinchu (TW)

Chun-Yen Chang of Hsinchu (TW)

Ya-Hui Chang of Hsinchu (TW)

Wei-Ting Chien of Hsinchu (TW)

Chia-Cheng Chen of Hsinchu (TW)

Liang-Yin Chen of Hsinchu (TW)

SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447869 titled 'SYSTEM AND METHOD FOR MULTIPLE STEP DIRECTIONAL PATTERNING

Simplified Explanation

The abstract of the patent application describes a semiconductor process system that uses an ion source to bombard a photoresist structure on a wafer. The system reduces the width of the photoresist structure by subjecting it to multiple distinct ion bombardment steps with different characteristics.

• The semiconductor process system uses an ion source to bombard a photoresist structure on a wafer.
• The purpose of the bombardment is to reduce the width of the photoresist structure.
• The system achieves this by subjecting the photoresist structure to multiple distinct ion bombardment steps.
• Each ion bombardment step has different characteristics, which contribute to the reduction of the photoresist structure width.
• The system employs a specific process to control and optimize the ion bombardment steps.
• The innovation lies in the use of multiple distinct ion bombardment steps with different characteristics to achieve a more precise reduction in the width of the photoresist structure.

Original Abstract Submitted

A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.