US Patent Application 18447881. INTEGRATED CIRCUIT WITH BACKSIDE TRENCH FOR METAL GATE DEFINITION simplified abstract
Contents
INTEGRATED CIRCUIT WITH BACKSIDE TRENCH FOR METAL GATE DEFINITION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
Jung-Chien Cheng of Hsinchu (TW)
INTEGRATED CIRCUIT WITH BACKSIDE TRENCH FOR METAL GATE DEFINITION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447881 titled 'INTEGRATED CIRCUIT WITH BACKSIDE TRENCH FOR METAL GATE DEFINITION
Simplified Explanation
The patent application describes an integrated circuit that includes two nanosheet transistors on a substrate.
- The nanosheet transistors have gate electrodes.
- A gate isolation structure is present on the backside of the substrate.
- The gate isolation structure physically and electrically isolates the gate electrodes from each other.
Original Abstract Submitted
An integrated circuit includes a first nanosheet transistor and a second nanosheet transistor on a substrate. The first and second nanosheet each include gate electrodes. A gate isolation structure extends from a backside of the substrate between the gate electrodes. The gate isolation structure physically and electrically isolates the first and second gate electrodes from each other.
