US Patent Application 18447912. MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM simplified abstract
Contents
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shy-Jay Lin of Jhudong Township (TW)
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447912 titled 'MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
Simplified Explanation
The patent application describes a magnetic memory device that uses a spin-orbit torque induction spin Hall electrode and a synthetic anti-ferromagnetic structure.
- The device includes a free layer with a magnetic moment that is not aligned with the long axis of the magnetic tunnel junction (MTJ) stack or the direction of current flow through the spin Hall electrode.
- The MTJ stack generates an internal magnetic field to switch the state of the free layer.
- The free layer consists of a first layer and a second layer separated by a spacer layer, which may have the same or different crystalline structures.
Original Abstract Submitted
A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer. The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.
