US Patent Application 18447638. MEMORY DEVICE WITH IMPROVED ANTI-FUSE READ CURRENT simplified abstract
Contents
MEMORY DEVICE WITH IMPROVED ANTI-FUSE READ CURRENT
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Meng-Sheng Chang of Hsinchu (TW)]]
[[Category:Chia-En Huang of Hsinchu (TW)]]
[[Category:Yao-Jen Yang of Hsinchu (TW)]]
[[Category:Yih Wang of Hsinchu (TW)]]
MEMORY DEVICE WITH IMPROVED ANTI-FUSE READ CURRENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447638 titled 'MEMORY DEVICE WITH IMPROVED ANTI-FUSE READ CURRENT
Simplified Explanation
The patent application describes a memory device that includes two programming gate-strips for anti-fuse structures.
- The memory device has a terminal conductor that is positioned over a terminal region between the channel regions of two transistors.
- There are two groups of programming conducting lines, one for each programming gate-strip.
- The first programming conducting lines are connected to the first programming gate-strip through a group of gate via-connectors.
- The second programming conducting lines are connected to the second programming gate-strip through another group of gate via-connectors.
Original Abstract Submitted
A memory device includes a first programming gate-strip for a first anti-fuse structure and a second programming gate-strip for a second anti-fuse structure. In the memory device, a terminal conductor overlies a terminal region between the channel regions of a first transistor and a second transistor. The memory device also includes a group of first programming conducting and a group of second programming conducting lines. The first programming conducting lines are conductively connected to the first programming gate-strip through a first group of one or more gate via-connectors. The second programming conducting lines are conductively connected to the second programming gate-strip through a second group of one or more gate via-connectors.